Ünal, B. Et Al. 2000. Photovoltaic properties of a novel stain etched porous silicon and its application in photosensitive devices. Optoelectronics I: Materials and Technologies for Optoelectronic Devices , (Strasbourg, France), 79-82.

Ünal, B., Parbukov, A., & Bayliss, S., (2000). Photovoltaic properties of a novel stain etched porous silicon and its application in photosensitive devices . Optoelectronics I: Materials and Technologies for Optoelectronic Devices (pp.79-82). Strasbourg, France

Ünal, BAYRAM, A.N. Parbukov, And S.C. Bayliss. "Photovoltaic properties of a novel stain etched porous silicon and its application in photosensitive devices," Optoelectronics I: Materials and Technologies for Optoelectronic Devices, Strasbourg, France, 2000

Ünal, BAYRAM Et Al. "Photovoltaic properties of a novel stain etched porous silicon and its application in photosensitive devices." Optoelectronics I: Materials and Technologies for Optoelectronic Devices , Strasbourg, France, pp.79-82, 2000

Ünal, B. Parbukov, A. And Bayliss, S. (2000) . "Photovoltaic properties of a novel stain etched porous silicon and its application in photosensitive devices." Optoelectronics I: Materials and Technologies for Optoelectronic Devices , Strasbourg, France, pp.79-82.

@conferencepaper{conferencepaper, author={BAYRAM ÜNAL Et Al. }, title={Photovoltaic properties of a novel stain etched porous silicon and its application in photosensitive devices}, congress name={Optoelectronics I: Materials and Technologies for Optoelectronic Devices}, city={Strasbourg}, country={France}, year={2000}, pages={79-82} }