Electrical characterisation of photovoltaic porous Si

Ünal B., Bayliss S.

Journal of Porous Materials, vol.7, no.1-3, pp.295-298, 2000 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 7 Issue: 1-3
  • Publication Date: 2000
  • Doi Number: 10.1023/a:1009600619044
  • Journal Name: Journal of Porous Materials
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.295-298
  • Keywords: D.c. Conductivity, Photo-voltage, Porous silicon
  • Istanbul Gelisim University Affiliated: No

Abstract

In this study n-type and p-type PV devices have been fabricated by anodising Si wafers with various resistivities in aqueous ethanoic HF solution followed by deposition of semitransparent contacts onto the porous layers. Various methods have been used for the optimisation of problematic contact to nanoporous layers. The measurements of importance are current-voltage (I-V) characteristics, the photovoltaic (PV) decay time spectrum, and the PV response as a function of excitation energy. © 2000 Kluwer Academic Publishers.