Comprehensive Investigation of the role of inner transition metal co-doping in modulating the dielectric and electrical properties of titania
Journal of the Indian Chemical Society, cilt.103, sa.9, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 103 Sayı: 9
- Basım Tarihi: 2026
- Doi Numarası: 10.1016/j.jics.2026.102900
- Dergi Adı: Journal of the Indian Chemical Society
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, EMBASE
- Anahtar Kelimeler: Dielectric properties, Doping, Electrical properties, Inner transition metals, Structure, TiO2
- İstanbul Gelişim Üniversitesi Adresli: Evet
Özet
Doping of inner transition metals (ITM) into the TiO2 system enables tailoring of the electrical and dielectric properties, which in turn govern its applications in diverse technologies such as electronic devices, sensors, energy storage, photocatalysis, and so on. This study presents a process for synthesizing Ce/Sm co-doped TiO2 through sol-gel auto-combustion-assisted sintering process. Structural analysis indicates the anatase phase belonging to the tetragonal symmetry and I4 1 /amd space group in both pristine and co-doped TiO2 samples. Microstructural analysis confirms the successful synthesis and incorporation of the Ce and Sm elements into the TiO2 system. The dielectric and electrical features were analyzed via a dielectric/impedance spectroscopy analyzer spanning a frequency spectrum up to 1.0 MHz and temperatures from 20 to 120 °C, considering various doping ratios. This is employed to analyze dielectric constant/loss, dissipation factor, ac/dc conductivity, activation energy, complex modulus, and Cole-Cole plot, presenting findings in a logarithmic 3D graph. The analysis confirms the power-law frequency law in ac conductivity for different co-doping concentrations. This reveals the effects of temperature and dopant ratio on the properties of the TiO2 system. Changes in activation energy levels and dc conductivity trends suggest a conduction mechanism that involves polaron, electron hopping, and ionic contributions. The dielectric parameters demonstrate moderate frequency-dependent variations. Precisely, the dielectric constant is influenced by impurities, space charge polarization, and grain-related factors. Nyquist plots of the impedance indicate resistive and capacitive responses from grain boundaries, grains, and ionic mobilities. Overall, the present research provides a thorough understanding of the complex relationship between dual co-doping of ITM Sm/Ce ions, electrical properties, and dielectric behavior in the TiO2 system across various frequencies and temperatures.