Research Information System
Journal of Applied Physics, vol.90, no.9, pp.4543-4548, 2001 (SCI-Expanded)
Current-voltage (I-V) and impedance measurements of oxidized metal/porous silicon (PS)/c-Si sandwich structures were performed at various temperatures. The I-V dependence at relatively small bias was found to be determined by the resistance of the PS layer. When the reverse bias is increased the injection of carriers commences. A power-law space charge limited current in the I-V dependence was observed at high forward bias. An exponential energy distribution of localized states with a characteristic energy of 60 meV was calculated from these. The existence of an inversion (n-type) layer with high conductivity was established in the p-type c-Si substrate adjacent to the PS layer. The presence of this inversion layer leads to an increase of the active device area, capacitance, and reverse current. © 2001 American Institute of Physics.