Transport of carriers in metal/porous silicon/c-Si device structures based on oxidized porous silicon
Journal of Applied Physics, cilt.90, sa.9, ss.4543-4548, 2001 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 90 Sayı: 9
- Basım Tarihi: 2001
- Doi Numarası: 10.1063/1.1407845
- Dergi Adı: Journal of Applied Physics
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.4543-4548
- İstanbul Gelişim Üniversitesi Adresli: Hayır
Özet
Current-voltage (I-V) and impedance measurements of oxidized metal/porous silicon (PS)/c-Si sandwich structures were performed at various temperatures. The I-V dependence at relatively small bias was found to be determined by the resistance of the PS layer. When the reverse bias is increased the injection of carriers commences. A power-law space charge limited current in the I-V dependence was observed at high forward bias. An exponential energy distribution of localized states with a characteristic energy of 60 meV was calculated from these. The existence of an inversion (n-type) layer with high conductivity was established in the p-type c-Si substrate adjacent to the PS layer. The presence of this inversion layer leads to an increase of the active device area, capacitance, and reverse current. © 2001 American Institute of Physics.