AC/DC conductivity, relaxation and impedance analysis of Cr–V co-substituted Sr–Ba nanohexaferrites
Journal of Materials Science: Materials in Electronics, vol.37, no.25, 2026 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 37 Issue: 25
- Publication Date: 2026
- Doi Number: 10.1007/s10854-026-18392-5
- Journal Name: Journal of Materials Science: Materials in Electronics
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Compendex, INSPEC, MEDLINE, Engineering Source (EBSCO), Materials Science & Engineering Collection (ProQuest), Technology Collection (ProQuest)
- Istanbul Gelisim University Affiliated: Yes
Abstract
The Cr3+/V3+ ions co-substituted Strontium–Barium (Sr0.5Ba0.5CrxVxFe12–2xO19 (x ≤ 0.10)) nanohexaferrites (NHFs) were produced by a one-pot sol–gel route. The structure, morphology, and electrical/dielectric properties were studied. X-ray powder diffraction (XRD) analysis confirmed the formation of hexagonal structured products without any impurity. The DXRD (crystallite size) of the products is between 32 and 46 nm. The dielectric and electrical properties of Sr0.5Ba0.5CrxVxFe12–2xO19 (x ≤ 0.10) NHFs were studied through dielectric constant, AC conductivity, and impedance analyses over a range of frequencies and temperatures. While AC conductivity exhibited a thermally activated hopping conduction, DC conductivity revealed bimode behavior with small polaron hopping occurring at high and low temperatures. Therefore, a semiconductor–metal-like transition was observed in the substituted NHFs. Thus, the dielectric constant and loss showed a strong frequency distribution, with substitution suppressing interfacial polarization at intermediate substitution levels, while re-emerging at higher concentrations. Electrical modulus analysis confirms non-Debye relaxation dynamics, and impedance spectroscopy shows that charge transport is thermally activated and dominated by resistive grain boundaries. A significant finding is that x systematically increases grain boundary resistivity, reducing overall conductivity while altering the relaxation behavior. Therefore, products offer insights for optimizing their performance in electronic and microwave device applications.