Formation of porous silicon layers on insulating substrate for microbridge - Type sensor applications

Andrushin S. Y., Balagurov L. A., Bayliss S. C., Liberova G. V., Petrova E. A., Unal B., ...Daha Fazla

Semiconductor Materials for Sensing, Boston, MA, Amerika Birleşik Devletleri, 29 Kasım - 02 Aralık 2004, cilt.828, ss.229-234 identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 828
  • Basıldığı Şehir: Boston, MA
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Sayfa Sayıları: ss.229-234
  • İstanbul Gelişim Üniversitesi Adresli: Hayır

Özet

Formation processes of porous silicon on insulating substrate were studied. It was demonstrated that both electrochemical and chemical formation methods allow to transform heavily doped p-type polycrystalline silicon into homogeneous porous silicon. Porous silicon was successfully used as sacrificial layer in the fabrication process of microbridge structures. © 2005 Materials Research Society.