Formation of porous silicon layers on insulating substrate for microbridge - Type sensor applications

Andrushin S. Y., Balagurov L. A., Bayliss S. C., Liberova G. V., Petrova E. A., Unal B., ...More

Semiconductor Materials for Sensing, Boston, MA, United States Of America, 29 November - 02 December 2004, vol.828, pp.229-234 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 828
  • City: Boston, MA
  • Country: United States Of America
  • Page Numbers: pp.229-234
  • Istanbul Gelisim University Affiliated: No

Abstract

Formation processes of porous silicon on insulating substrate were studied. It was demonstrated that both electrochemical and chemical formation methods allow to transform heavily doped p-type polycrystalline silicon into homogeneous porous silicon. Porous silicon was successfully used as sacrificial layer in the fabrication process of microbridge structures. © 2005 Materials Research Society.