Akademik Veri Yönetim Sistemi
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, cilt.35, sa.6, 2017 (SCI-Expanded)
In nanofabrication, use of thin resist is required to achieve very high resolution features. But thin resist makes pattern transferring by dry etching difficult because typical resist has poor resistance to plasma etching. One widely employed strategy is to use an intermediate hard mask layer, with the pattern first transferred into this layer, then into the substrate or sublayer. Cr is one of the most popular hard etching mask materials because of its high resistance to plasma etching. Cr etching is carried out in O2 and Cl2 or CCl4 environment to form the volatile etching product CrO2Cl2, but addition of O2 gas leads to fast resist etching. In this work, the authors show that Cr2O3 can be etched readily in a Cl2/O2 gas mixture with less oxygen than needed for Cr etching, because Cr2O3 contains oxygen by itself. Thus it is easier to transfer the resist pattern into Cr2O3 than into Cr. For the subsequent pattern transferring into the substrate here silicon using nonswitching pseudo-Bosch inductively coupled plasma-reactive ion etching with SF6/C4F8 gas and Cr or Cr2O3 as mask, it was found that the two materials have the same etching resistance and selectivity of 100:1 over silicon. Therefore, Cr2O3 is a more suitable hard mask material than Cr for pattern transferring using dry plasma etching.